Characterization and Modeling

Device Characterization for Modeling and Process Development

Semiconductor device modeling creates models for behavior of the discrete, elementary devices (transistors, inductors, diodes, etc.) based on fundamental physics, geometry, design and operation conditions. One of the important steps is to perform electrical on-wafer measurements of such devices and this step is general known as Device Characterization. Driven by emergence of the new device technologies, new materials, processes development and integration, the Device Characterization process faces increasing challenges in electrical test for more and more sophisticated devices.

Basic device characterization and modeling requires accurate I-V/C-V, RF, load pull and noise measurement of devices under temperature controlled and EMI-shielded test environment. Engineers are facing challenges such as repeatability of the measurement, reliable probe contact, external noise influences, low leakage performance of the probes and chucks, thermal performance of the system and correct electrical connections between the device and various instruments.

MPI Engineering Probe Systems are designed to provide accurate measurement results with maximum confidence. With the dedicated Accessories such as coaxial, Kelvin, triaxial measurements connection, thermal chucks with leakage performance down to fA level over the temperature range from -60 to 300 °C and superior thermal distribution, EMI-shielded and light-tight test environment, the MPI TS200-SE is suitable for performing accurate Device Characterization.

MPI's total RF measurement solutions for device modeling provides precision RF measurement results and calibrations up to 110 GHz by employing MPI's calibration software QAlibria™ and MPI RF Probes.

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