High Power Device Characterization
On-wafer characterization applications for high power devices face specific challenges such as chuck to wafer backside contact resistance, high current device pad burnout, and low leakage measurement at high voltage over temperature, arcing, thin-wafer handling and user safety.
MPI's High Power Probe System provide accurate measurement of high power devices up to 3 kV (triax)/10 kV (coax) and 400 A (pulse) even at the elevated temperature of up to 300 °C. MPI's gold plated high power thermal chucks with evenly distributed vacuum holes located across the chuck to secure thin/warped wafers down to 50µm and provides excellent backside wafer contact while achieving low contact resistance for vertical device Rds-on measurements.
Multi contact High Current Probes not only reduce the probe contact resistance but also avoid device pad burnout usually associated with single needle probes by distributing current. MPI's high voltage probes are design to withstand up to 10 kV for low leakage device breakdown measurements. To suppress high voltage measurement arching, systems include specially design trays for Florinat liquid.
MPI's High Power Probe Systems are designed to integrate with various test instruments, such as Keithley or Keysight SMUs, and provide fast system setup for various device test conditions.
MPI high power probing solutions comes with safety systems and are tested for regulatory safety certificates.