Due to the asymmetry in the time constants associated with capture and release of charges in “traps,” in GaN devices, a conventional pulsed characterization is not sufficient in order to keep both the thermal and trapping states fixed. To keep the trap state constant for a conventional PIV characterization a tri-state control of the standard pulses is developed where both at the gate and drain side a third state is excited just before the main pulse which acts as a pre-pulse.
Features & Benefits
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Traditional Pulsed IV systems are comprised of two pairs of power supplies used for the Quiescent and Non Quiescent states. Focus now offers a new TRI-State pulse system which includes a third pair of power supplies allowing the user to create a Pre-Pulse state.
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Nonlinear charge trapping effects have puzzled designers for years and the standard two state pulse systems are insufficient to fully characterize memory effects for the GaN FETs.
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Focus’ TRI-State Pulsed IV system offers not only an efficient isothermal measurement condition, but also allows the user to control and characterize various charge trapping states.
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- 3 Measurement States; Quiescent (OFF-State), Non Quiescent (ON-State), and Pre-State
- The Pre State is a short high voltage state used to activate the traps in the semiconductor. - Adjustable delay (Δt) between the Pre state and Non Quiescent state down to 0s.
- Independently adjustable timing settings for the Three-state gate pulser and drain pulser
- Easy Integration into existing mainframes
- 3 Measurement States; Quiescent (OFF-State), Non Quiescent (ON-State), and Pre-State
Tri-state Pulser
