Facts & Benefits
- Fully automated process
- Enables highly accurate characterization
- Easy expandability with Measmatic for future requirements
- On wafer & packaged in a single system
- Flexibility with user-defined test plans
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This measurement system offers a complete solution for the characterization of 2- and 3-pole power devices as field effect transistors (FETs), BJT transistors (Bipolar Junction), diodes, capacitors up to 3 kV and 100 A.By contacting the device under test once, all relevant off-state and on-state parameters as well as characteristic capacitances (Ciss, Coss Crss) can be measured. I-V characterization can be performed in both pulsed and DC modes. The system thus operates at wafer level and can also be used for capped devices.