Facts & Benefits
- Overcurrent limitation (measuring probe protection)
- Bulk current measurement
- Reliability test (HCI)
- ICCAP driver
Technical specifications
- Maximum drain voltage: 1100 V
- Maximum drain current: 1 A
- Pulse widths: 250 ns - 5 ms
- 2-4 connections
- P- and N-MOSFET, as well as depletion MOSFET, 2-pole devices (diode/ resistor)
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PIV1002 is a laboratory system for the characterization of high voltage MOSFETs. The MOSFETs are subjected to pulsed measurement, which enables isothermal behavior. Thus, devices can be characterized at wafer level in high power ranges.By adjusting the duty cycle during the measurement, the device can be characterized from isothermal behavior to thermal effects. Output and transfer characteristics can be measured. The PIV1002 provides programmable stress cycles that allow reliability studies on 2- and 3-pole devices; e.g. pulsed hot carrier measurements (HCI) on MOSFETs. The system is also remotely controllable by IC-CAP.The measurement system is controlled by a user-friendly control software on a PC. The PIV1002 has three different operating modes:
- The pulse width is constant. In the outer measurement loop, the gate voltage is changed. In the inner measurement loop, the drain-source voltage is changed. This allows characteristic fields to be generated with the smallest pulse widths and the smallest thermal loads
- The gate voltage is constant. In the outer measurement loop, the pulse width is changed. In the inner measurement loop, the drain voltage is changed. This allows investigations of the thermal drift behavior of the device
- Cycle mode for reliability investigations